SI4104DY-T1-GE3 datasheet

Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)

О ДАТАШИТЕ

• Маркировка
  SI4104DY-T1-GE3
• Производитель
  Siliconix
• Описание
  Vishay Intertechnology SI4104DY-T1-GE3 Configuration: Single Quad Drain Triple Source Continuous Drain Current: 3.2 A Current - Continuous Drain (id) @ 25?° C: 4.6A Drain Source Voltage Vds: 100V Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 13nC @ 10V Gate-source Breakdown Voltage: +/- 20 V ID_COMPONENTS: 1716282 Input Capacitance (ciss) @ Vds: 446pF @ 50V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount On Resistance Rds(on): 85mohm Operating Temperature Range: -55?‚?°C To +150?‚?°C Package / Case: 8-SOIC (0.154", 3.90mm Width) Power - Max: 5W Power Dissipation: 2.5 W Rds On (max) @ Id, Vgs: 105 mOhm @ 5A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.105 Ohms Rohs Compliant: Yes Series: TrenchFET?® Transistor: RoHS Compliant Transistor Case Style: SOIC Transistor Polarity: N Channel Vgs(th) (max) @ Id: 4.5V @ 250?µA Voltage Vgs Max: 20V Other Names: SI4104DY-T1-GE3TR
• Количество страниц
  10 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

Скачать datasheet SI4104DY-T1-GE3.pdf
Файл формата Pdf 178,38 KB